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Image Search Results
Journal: ACS Nano
Article Title: Tuning and Probing the Distribution of Cu + and Cu 2+ Trap States Responsible for Broad-Band Photoluminescence in CuInS 2 Nanocrystals
doi: 10.1021/acsnano.8b05843
Figure Lengend Snippet: Recombination mechanism upon reducing and oxidizing potentials. (a) Schematic representation of radiative recombination in an ensemble of ternary CuInS 2 nanocrystals, which involves a distribution of trap states, corresponding to single Cu + (below the Fermi level, E F ) and Cu 2+ (above E F ) defect states for each individual NC. Active defect states (Cu + ) within the band gap are indicated by the colored area in the trap-state distribution. (b) The distribution of trap states determines the width, position, and intensity of the PL band, depending on the ratio between NCs containing Cu 2+ (positive potentials) and Cu + (negative potentials) trap states within the ensemble. The distribution of trap states can be tuned by (c) applying positive potentials vs Ag pseudoreference electrode (PRE) and (d) negative potentials vs Ag PRE. This results in (c) a shift to lower energy, broadening of the PL line width and an increase in intensity when negative potentials are applied, and (d) a shift to higher energy, narrowing of the PL line width and a decrease in intensity when positive potentials are applied by (c) activating single Cu + trap states and (d) deactivating single Cu + trap states, which is responsible for radiative recombination in ternary CuInS 2 nanocrystals. (e) Efficient Auger recombination of the electron with the excess hole (in a single electrochemically oxidized Cu 2+ cation within a CIS NCs), and the photogenerated hole in the VB edge results in additional non-radiative recombination and, hence, quenching of the PL. (f) In the absence of a Cu 2+ center, the single CIS NC is bright after quick localization of the photogenerated hole on the Cu + center and radiative recombination with the delocalized CB electron.
Article Snippet: The (
Techniques: